Structure and optical properties of the ZnS films as such as of the individual kesterite layers and of their combination have been also researched. Other investigated electrical and electronic parameters obtained from the current-voltage (I-U) and capacitance-voltage (C-U) characteristics are the electrical resistivities q CZTS and q ZnS, the ZnS/Cu 2 ZnSnS 4 rectifying barrier U, the height u of symmetrical double Schottky barriers in the grain boundary regions in the polycrystalline kesterite layers, the width of the electron depletion regions x, the concentration of the fully ionized donor impurity N d in n-ZnS and acceptor impurity N a in p-Cu 2 ZnSnS 4, the density N SS of the surface states in the kesterite layers. The work shows the results of analysis of diode characteristics of the developed ZnS/Cu 2 ZnSnS 4 heterostructures (series resistance R s, shunt resistance R sh, ideality factor n d and the saturation current densities J o). For a creation of semiconductor heterojunction n-ZnS/p-Cu 2 ZnSnS 4 we prepared ZnS thin films by SILAR method.
The pores in this main Cu 2 ZnSnS 4 layer were filled by SILAR-deposited nanocrys-talline kesterite layer. The p-CZTS absorber is fabricated by the creation of the main Cu 2 ZnSnS 4 layer through sulfurization of a stack of the electrodeposited Cu/Sn/Zn metal films. The work is devoted to the development of a new thin film composition for kesterite solar cell with the base Cu 2 ZnSnS 4 (CZTS) layer obtained by the combination of two low-cost liquid methods, namely elec-trodeposition and Successive Ionic Layer Adsorption and Reaction (SILAR).
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